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Part Number: IDT7204L80DB
NIIN: 014220377
Item Name : Microcircuit Memory
CAGE Code: 61772
FSG: 59 Electrical and Electronic Equipment Components
Country: USA
NCB Code: 01

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Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/terms-conditions.aspx . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

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We organize our offerings in a variety of ways to make the search process simple for part number IDT7204L80DB and other similar items. For instance, this Integrated Device Technology Inc product is listed alongside the NSN 5962-01-422-0377, and it falls under Federal Supply Class (FSC) 5962 Microcircuits Electronic. Furthermore, through our rigorous vetting processes, careful part inspections, document verification practices, and more, we have established ourselves as a trusted distributor operating with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. With all of this in mind, begin the procurement process for part number IDT7204L80DB from CAGE Code 61772 on our website, and see why so many customers steadily depend on Buy Mil-NSN Parts for the NSN products they require.

NSN Information for Part Number IDT7204L80DB with NSN 5962-01-422-0377, 5962014220377

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-422-0377

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620142203770ND
CIICHCCESDPMICCriticalityENAC
UDA0
Part NumberISCRNVCRNCCHCCMSDSSADC
5962-8956802XX595

Characteristics Data of NSN 5962-01-422-0377, 5962014220377

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING1.000 WATTS"
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS"
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC"
CTQXCURRENT RATING PER CHARACTERISTIC50.00 MILLIAMPERES MAXIMUM ABSOLUTE OUTPUT"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE"
CZEPCAPITANCE RATING PER CHARACTERISTIC8.000 INPUT PICOFARADS MAXIMUM"
CZEQTIME RATING PER CHACTERISTIC80.000 NANOSECONDS MAXIMUM ACCESS"
CZERMEMORY DEVICE TYPEFIRST-IN FIRST-OUT"
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC"
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT"
AEHXMAXIMUM POWER DISSIPATION RATING1.000 WATTS"
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS"
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC"
CTQXCURRENT RATING PER CHARACTERISTIC50.00 MILLIAMPERES MAXIMUM ABSOLUTE OUTPUT"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE"
CZEPCAPITANCE RATING PER CHARACTERISTIC8.000 INPUT PICOFARADS MAXIMUM"
CZEQTIME RATING PER CHACTERISTIC80.000 NANOSECONDS MAXIMUM ACCESS"
CZERMEMORY DEVICE TYPEFIRST-IN FIRST-OUT"
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC"
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT"

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