Are you in search of a reputable online distributor that can reliably source and ship top-notch military and defense parts, NSN parts, and aerospace parts? If so, we have you covered on Buy Mil-NSN Parts with our unrivaled inventory of offerings. Thank you for taking an interest in part number IDT6167LA55EBRT, a Integrated Device Technology Inc item that is listed alongside the description “Microcircuit Memory” and the NSN 5962013569162. If you would like to learn more about this particular listing, you can always take the initial step of the procurement process via the submission of the quote request form on this page.
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We organize our offerings in a variety of ways to make the search process simple for part number IDT6167LA55EBRT and other similar items. For instance, this Integrated Device Technology Inc product is listed alongside the NSN 5962-01-356-9162, and it falls under Federal Supply Class (FSC) 5962 Microcircuits Electronic. Furthermore, through our rigorous vetting processes, careful part inspections, document verification practices, and more, we have established ourselves as a trusted distributor operating with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. With all of this in mind, begin the procurement process for part number IDT6167LA55EBRT from CAGE Code 61772 on our website, and see why so many customers steadily depend on Buy Mil-NSN Parts for the NSN products they require.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-356-9162 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013569162 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| IDT6167LA55EBRT | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | MILSTAR |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | F-9 MIL-M-38510 |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
| CZER | MEMORY DEVICE TYPE | RAM |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND RADIATION HARDENED |
| CRTL | CRITICALITY CODE JUSTIFICATION | CBBL AND FEAT AND NHCF |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,DIGITAL-CMOS,16K X 1 BIT,STATIC RAM |
| FEAT | SPECIAL FEATURES | RAD HARD PER RAYTHEON G371916; ANSI Y14.5M-1982 |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 FLAT LEADS |
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