Are you in search of a reputable online distributor that can reliably source and ship top-notch military and defense parts, NSN parts, and aerospace parts? If so, we have you covered on Buy Mil-NSN Parts with our unrivaled inventory of offerings. Thank you for taking an interest in part number IDT71257L35CB, a Integrated Device Technology Inc item that is listed alongside the description “Microcircuit Memory” and the NSN 5962013236988. If you would like to learn more about this particular listing, you can always take the initial step of the procurement process via the submission of the quote request form on this page.
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We organize our offerings in a variety of ways to make the search process simple for part number IDT71257L35CB and other similar items. For instance, this Integrated Device Technology Inc product is listed alongside the NSN 5962-01-323-6988, and it falls under Federal Supply Class (FSC) 5962 Microcircuits Electronic. Furthermore, through our rigorous vetting processes, careful part inspections, document verification practices, and more, we have established ourselves as a trusted distributor operating with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. With all of this in mind, begin the procurement process for part number IDT71257L35CB from CAGE Code 61772 on our website, and see why so many customers steadily depend on Buy Mil-NSN Parts for the NSN products they require.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-323-6988 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013236988 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 77A105855P001 | 2 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND MONOLITHIC AND ELECTROSTATIC SENSITIVE |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| ADAQ | BODY LENGTH | 1.280 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
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