Are you in search of a reputable online distributor that can reliably source and ship top-notch military and defense parts, NSN parts, and aerospace parts? If so, we have you covered on Buy Mil-NSN Parts with our unrivaled inventory of offerings. Thank you for taking an interest in part number 3BHB006457R0001, a Abb Oy Marine Ja Turboahtimet item that is listed alongside the description “Semiconductor Device Diode” and the NSN 5961015222517. If you would like to learn more about this particular listing, you can always take the initial step of the procurement process via the submission of the quote request form on this page.
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We organize our offerings in a variety of ways to make the search process simple for part number 3BHB006457R0001 and other similar items. For instance, this Abb Oy Marine Ja Turboahtimet product is listed alongside the NSN 5961-01-522-2517, and it falls under Federal Supply Class (FSC) 5961 Semiconductor Devices and Associated Hardware. Furthermore, through our rigorous vetting processes, careful part inspections, document verification practices, and more, we have established ourselves as a trusted distributor operating with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. With all of this in mind, begin the procurement process for part number 3BHB006457R0001 from CAGE Code S3370 on our website, and see why so many customers steadily depend on Buy Mil-NSN Parts for the NSN products they require.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-522-2517 Item PartTypeName: SEMICONDUCTOR DEVICE,DIODE | 5961 | 015222517 | N | D | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| D | A | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 3BHB006457R0001 | 5 | 1 | C | 9 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AGAV | END ITEM IDENTIFICATION | UNIT FREQ CONVERTOR, P/N 3BHB011219R0001 |
| FEAT | SPECIAL FEATURES | HARD FAST DRIVE DIODE; SPECIALLY DESIGNED FOR SNUBBERLESS OPERATION; LOW TOSSES, SOFT RECOVERY; FULL BLOCKING CAPABILITY AT 140 DEG C WITH 50HZ; HIGH DI/DT AND LOW THERMAL RESISTANCE BY USING LOW TEMPERATURE-CONNECTION NTV BETWEEN SILICON W |
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