Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-422-0377 (014220377) |
NCB Code | USA (01) |
Manufacturer | Dla Land And Maritime, Military Specifications, Integrated Device Technology Inc, Matra Harris Semiconductor |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
5962-89568 | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8956802XA | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8956802XA | military specifications | microcircuit memory | 81349 | RFQ |
5962-8956802XB | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8956802XC | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8956802XX | dla land and maritime | microcircuit memory | 67268 | RFQ |
IDT7204L80DB | integrated device technology inc | microcircuit memory | 61772 | RFQ |
MM1I-67204-55MB | matra harris semiconductor | microcircuit memory | 0hgz7 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.000 WATTS" |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM ABSOLUTE OUTPUT" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
CZEP | CAPITANCE RATING PER CHARACTERISTIC | 8.000 INPUT PICOFARADS MAXIMUM" |
CZEQ | TIME RATING PER CHACTERISTIC | 80.000 NANOSECONDS MAXIMUM ACCESS" |
CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT" |
CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.000 WATTS" |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM ABSOLUTE OUTPUT" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
CZEP | CAPITANCE RATING PER CHARACTERISTIC | 8.000 INPUT PICOFARADS MAXIMUM" |
CZEQ | TIME RATING PER CHACTERISTIC | 80.000 NANOSECONDS MAXIMUM ACCESS" |
CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT" |
CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
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