| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-375-2538 (013752538) |
| NCB Code | USA (01) |
| Manufacturer | Raytheon Company, Cypress Semiconductor Inc, Texas Instruments Inc, Waferscale Integration Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 654907-6 | raytheon company | microcircuit memory | 82577 | RFQ |
| CY7C263-45DMB | cypress semiconductor inc | microcircuit memory | 65786 | RFQ |
| HE1285A0D006 | texas instruments inc | microcircuit memory | 65425 | RFQ |
| WS57C49B-45 | waferscale integration inc | microcircuit memory | 66579 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| ADAQ | BODY LENGTH | 1.230 INCHES MINIMUM AND 1.280 INCHES MAXIMUM |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM ACCESS |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| ADAU | BODY HEIGHT | 0.095 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT AND HIGH SPEED AND LOW POWER AND W/DISABLE AND HIGH PERFORMANCE AND ULTRAVIOLET ERASABLE AND HIGH IMPEDANCE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 120.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 5.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM |
| CZER | MEMORY DEVICE TYPE | EPROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 660.0 MILLIWATTS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
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