| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-372-6628 (013726628) |
| NCB Code | USA (01) |
| Manufacturer | Bae Systems Inc, Performance Semiconductor Corp |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1372PD1124 | bae systems inc | microcircuit memory | 72314 | RFQ |
| P4C147L-15DMB | performance semiconductor corp | microcircuit memory | 75569 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 020 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN15 INPUT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES MAXIMUM INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYRAMS SCRAMS |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC5 00 INPUT PICOFARADS NOMINAL AND 7 00 OUTPUT PICOFARADS NOMINAL |
| MEMORY | CBBL | FEATURES PROVIDEDHIGH SPEED AND STATIC OPERATION AND HIGH PERFORMANCE AND WENABLE AND HIGH IMPEDANCE AND WDISABLE AND HERMETICALLY SEALED |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | ADAQ | BODY LENGTH0 860 INCHES MINIMUM AND 0 960 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC15 00 NANOSECONDS MAXIMUM ACCESS |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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