| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-331-7106 (013317106) |
| NCB Code | USA (01) |
| Manufacturer | Dla Land And Maritime, Bae Systems Inc, Advanced Micro Devices Inc, Mmi Amd, Philips Semiconductors Ltd, Texas Instruments Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 5962-85155 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8515509BRA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8515509BRB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8515509BRX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8515509RA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8515509RB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8515509RX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| PAL-025 | bae systems inc | microcircuit memory | k0978 | RFQ |
| PAL16L8DCJ | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| PAL16L8DMJ 883B | mmi amd | microcircuit memory | 50364 | RFQ |
| PLUS16L8 BRA | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| ROM PROM HEAD 200 | dla land and maritime | microcircuit memory | 16236 | RFQ |
| TIBPAL16L8-15MJB | texas instruments inc | microcircuit memory | 01295 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| ABKW | OVERALL HEIGHT | 0.400 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| CBBL | FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND BIDIRECTIONAL |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 12.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE |
| CZER | MEMORY DEVICE TYPE | PAL |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| Components Related to NSN - 5962-01-331-7106, 5962013317106 | ||||
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| 5940-00-615-5893 (5940006155893) | 5998-00-297-6935 (5998002976935) | 5950-00-646-2937 (5950006462937) | 5961-00-228-5860 (5961002285860) | |
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