Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-300-0495 (013000495) |
NCB Code | USA (01) |
Manufacturer | Rockwell Collins Aerospace, Microchip Technology Incorporated, Dla Land And Maritime, Advanced Micro Devices Inc, Texas Instruments Inc, Waferscale Integration Inc |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
258-0197-010 | rockwell collins aerospace | microcircuit memory | 13499 | RFQ |
27C128-25BXA | microchip technology incorporated | microcircuit memory | 60991 | RFQ |
5962-87661 | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8766106BXA | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8766106BXB | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8766106BXX | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8766106XA | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8766106XB | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8766106XX | dla land and maritime | microcircuit memory | 67268 | RFQ |
AM27C128-250 BXA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
SMJ27C128-25JM | texas instruments inc | microcircuit memory | 01295 | RFQ |
WS27C128L-25DMB | waferscale integration inc | microcircuit memory | 66579 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.165 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 300.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND W/ENABLE AND ULTRAVIOLET ERASABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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