| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-293-7702 (012937702) |
| NCB Code | USA (01) |
| Manufacturer | Ge Aviation Systems Ltd, Boonton Electronics Corporation, Military Specifications, Lockheed Martin Corporation, White Electronic Designs Corpora |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 515C9630-02-020 | ge aviation systems ltd | microcircuit memory | 86360 | RFQ |
| 534403000 | boonton electronics corporation | microcircuit memory | 04901 | RFQ |
| 5962-3829205BXA | military specifications | microcircuit memory | 81349 | RFQ |
| 5962-3829205BXB | military specifications | microcircuit memory | 81349 | RFQ |
| 5962-3829205BXX | military specifications | microcircuit memory | 81349 | RFQ |
| 7108908-001 | ge aviation systems ltd | microcircuit memory | 93322 | RFQ |
| C11872-8 | lockheed martin corporation | microcircuit memory | 81755 | RFQ |
| EDH8808ACL20KMHR | white electronic designs corpora | microcircuit memory | 66301 | RFQ |
| M38510/29205BXA | military specifications | microcircuit memory | 81349 | RFQ |
| M38510/29205BXX | military specifications | microcircuit memory | 81349 | RFQ |
| MIL-M-38510/292 | military specifications | microcircuit memory | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND ASYNCHRONOUS AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/292 GOVERNMENT SPECIFICATION |
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| 5962-01-468-3171 (5962014683171) | 5930-01-462-7010 (5930014627010) | 5975-01-213-2865 (5975012132865) | 5998-01-663-9810 (5998016639810) | |
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