Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-267-8169 (012678169) |
NCB Code | USA (01) |
Manufacturer | Nimikkeistokeskus Ncb Finland, Lockheed Martin Corporation, Hamilton Sundstrand Corporation, Cypress Semiconductor Inc, Integrated Device Technology Inc, Pyramid Semiconductor Corp, Nec Electronics U S A Inc |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
10133816 | nimikkeistokeskus ncb finland | microcircuit memory | a486g | RFQ |
7909559-45 | lockheed martin corporation | microcircuit memory | 90536 | RFQ |
795066-1 | hamilton sundstrand corporation | microcircuit memory | 73030 | RFQ |
CY7C167-55 | cypress semiconductor inc | microcircuit memory | 65786 | RFQ |
CY7C167-55DMB | cypress semiconductor inc | microcircuit memory | 65786 | RFQ |
IDT6167LA55LB | integrated device technology inc | microcircuit memory | 61772 | RFQ |
P4C167L-55LMB | pyramid semiconductor corp | microcircuit memory | 3dtt2 | RFQ |
UPD2167 | nec electronics u s a inc | microcircuit memory | 4t165 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.425 INCHES NOMINAL |
ADAT | BODY WIDTH | 0.290 INCHES NOMINAL |
ADAU | BODY HEIGHT | 0.065 INCHES NOMINAL |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 20 LEADLESS |
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