Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-265-8171 (012658171) |
NCB Code | USA (01) |
Manufacturer | E2v Inc, Philips Semiconductors Ltd, Rockwell Collins Aerospace, Northrop Grumman Systems Corporation, Dla Land And Maritime, Intel Corporation, Rochester Electronics Llc, National Semiconductor Corporation, Leonardo Mw Ltd |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
27C64-20 YA | e2v inc | microcircuit memory | 0c7v7 | RFQ |
27C64A-BXA-20 | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
351-5744-062 | rockwell collins aerospace | microcircuit memory | 13499 | RFQ |
585R630H03 | northrop grumman systems corporation | microcircuit memory | 97942 | RFQ |
85102 | dla land and maritime | microcircuit memory | 67268 | RFQ |
8510203YA | dla land and maritime | microcircuit memory | 67268 | RFQ |
8510203YB | dla land and maritime | microcircuit memory | 67268 | RFQ |
8510203YX | dla land and maritime | microcircuit memory | 67268 | RFQ |
MD27C64 20 B | intel corporation | microcircuit memory | 34649 | RFQ |
MD27C64-20 BYA | rochester electronics llc | microcircuit memory | 3v146 | RFQ |
NMC27C64Q20 883 | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
ROM PROM HEAD 177 | dla land and maritime | microcircuit memory | 16236 | RFQ |
VA-85-0708-001 | leonardo mw ltd | microcircuit memory | k0668 | RFQ |
VA-85-0708-004 | leonardo mw ltd | microcircuit memory | k0668 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 170.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | PROM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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