Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-262-0193 (012620193) |
NCB Code | USA (01) |
Manufacturer | Dla Land And Maritime, Raytheon Company, Lockheed Martin Corporation, Raytheon Technical Services Company, Advanced Micro Devices Inc, Msis Semiconductor Inc, Fujitsu America Inc |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
5962-86081 | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8608101BRA | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8608101BRB | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8608101BRX | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8608101RA | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8608101RB | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8608101RX | dla land and maritime | microcircuit memory | 67268 | RFQ |
717367-61 | raytheon company | microcircuit memory | 05869 | RFQ |
7546405P502 | lockheed martin corporation | microcircuit memory | 99971 | RFQ |
A984-1 | raytheon technical services company | microcircuit memory | 36378 | RFQ |
AM2168-55 BRA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
AM2168-55-BRA | msis semiconductor inc | microcircuit memory | 0hw02 | RFQ |
MB8168-55 | fujitsu america inc | microcircuit memory | 3r731 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND STATIC OPERATION |
CQSJ | INCLOSURE MATERIAL | METAL OR CERAMIC OR PLASTIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 20 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
Components Related to NSN - 5962-01-262-0193, 5962012620193 | ||||
5935-00-789-6206 (5935007896206) | 5999-00-195-5441 (5999001955441) | 5930-00-426-2671 (5930004262671) | 5935-01-210-1780 (5935012101780) | |
5990-01-114-9896 (5990011149896) | 5925-01-198-7912 (5925011987912) | 5995-01-152-5092 (5995011525092) | 5910-00-989-4896 (5910009894896) | |
5961-00-172-8326 (5961001728326) | 5950-00-971-5673 (5950009715673) | 5925-00-235-0046 (5925002350046) | 5962-01-421-9559 (5962014219559) | |
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