| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-260-8680 (012608680) |
| NCB Code | USA (01) |
| Manufacturer | Nimikkeistokeskus Ncb Finland, Dla Land And Maritime, Raytheon Company, Thales Sa, Matra Harris Semiconductor, Integrated Device Technology Inc, Performance Semiconductor Corp |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 415-2454 | nimikkeistokeskus ncb finland | microcircuit memory | a486g | RFQ |
| 5962-38294 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-3829409MXA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-3829409MXB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-3829409MXX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-85525 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8552505XA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8552505XB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8552505XX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 72-01398-097 | raytheon company | microcircuit memory | 00724 | RFQ |
| 8552505XA | dla land and maritime | microcircuit memory | 16236 | RFQ |
| 99165736 | thales sa | microcircuit memory | f6481 | RFQ |
| HM1E-65764N 883 | matra harris semiconductor | microcircuit memory | 0hgz7 | RFQ |
| IDT7164L55DB | integrated device technology inc | microcircuit memory | 61772 | RFQ |
| IDT7164S55DB | integrated device technology inc | microcircuit memory | 61772 | RFQ |
| P4C164-55DWMB | performance semiconductor corp | microcircuit memory | 75569 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.232 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -3.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| Components Related to NSN - 5962-01-260-8680, 5962012608680 | ||||
| 5950-00-782-4837 (5950007824837) | 5905-01-053-5779 (5905010535779) | 5962-01-037-6404 (5962010376404) | 5995-01-204-1471 (5995012041471) | |
| 5970-01-146-4146 (5970011464146) | 5975-01-393-2233 (5975013932233) | 5999-01-420-7755 (5999014207755) | 5910-00-826-2725 (5910008262725) | |
| 5998-01-303-6935 (5998013036935) | 5935-01-273-2470 (5935012732470) | 5935-01-172-3967 (5935011723967) | 5999-01-176-2149 (5999011762149) | |
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