| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-260-8680 (012608680) |
| NCB Code | USA (01) |
| Manufacturer | Nimikkeistokeskus Ncb Finland, Dla Land And Maritime, Raytheon Company, Thales Sa, Matra Harris Semiconductor, Integrated Device Technology Inc, Performance Semiconductor Corp |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 415-2454 | nimikkeistokeskus ncb finland | microcircuit memory | a486g | RFQ |
| 5962-38294 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-3829409MXA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-3829409MXB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-3829409MXX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-85525 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8552505XA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8552505XB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-8552505XX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 72-01398-097 | raytheon company | microcircuit memory | 00724 | RFQ |
| 8552505XA | dla land and maritime | microcircuit memory | 16236 | RFQ |
| 99165736 | thales sa | microcircuit memory | f6481 | RFQ |
| HM1E-65764N 883 | matra harris semiconductor | microcircuit memory | 0hgz7 | RFQ |
| IDT7164L55DB | integrated device technology inc | microcircuit memory | 61772 | RFQ |
| IDT7164S55DB | integrated device technology inc | microcircuit memory | 61772 | RFQ |
| P4C164-55DWMB | performance semiconductor corp | microcircuit memory | 75569 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.232 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -3.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| Components Related to NSN - 5962-01-260-8680, 5962012608680 | ||||
| 5998-01-426-5075 (5998014265075) | 5950-01-028-6707 (5950010286707) | 5975-01-323-0674 (5975013230674) | 5998-00-444-2908 (5998004442908) | |
| 5998-01-670-0290 (5998016700290) | 5905-01-099-4430 (5905010994430) | 5930-01-046-8141 (5930010468141) | 5995-01-460-6411 (5995014606411) | |
| 5910-00-617-3236 (5910006173236) | 5995-01-619-5989 (5995016195989) | 5935-01-259-1269 (5935012591269) | 5985-01-265-5129 (5985012655129) | |
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