Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-252-7952 (012527952) |
NCB Code | USA (01) |
Manufacturer | Dla Land And Maritime, Freescale Semiconductor Inc, Raytheon Company, Advanced Micro Devices Inc, Sgs Thompson Microelectronics Inc, Integrated Device Technology Inc, Intel Corporation, Performance Semiconductor Corp |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
5962-86705 | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8670509RA | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8670509RB | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8670509RX | dla land and maritime | microcircuit memory | 67268 | RFQ |
6268-70 BRAJC | freescale semiconductor inc | microcircuit memory | 04713 | RFQ |
717367-60 | raytheon company | microcircuit memory | 05869 | RFQ |
AM99C68-70 BRA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
HGS1420S-70M | sgs thompson microelectronics inc | microcircuit memory | 60911 | RFQ |
IDT6168S70CB | integrated device technology inc | microcircuit memory | 61772 | RFQ |
IDT6168SA70DB | integrated device technology inc | microcircuit memory | 61772 | RFQ |
IMS 420S-70M | sgs thompson microelectronics inc | microcircuit memory | 60911 | RFQ |
MD51C68 70 B | intel corporation | microcircuit memory | 34649 | RFQ |
P4C168-70DMD | performance semiconductor corp | microcircuit memory | 75569 | RFQ |
PA60405-1 | raytheon company | microcircuit memory | 82577 | RFQ |
SC0214 | integrated device technology inc | microcircuit memory | 61772 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND W/ENABLE AND POSITIVE OUTPUTS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 14933-5962-86705 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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