| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-236-6875 (012366875) |
| NCB Code | USA (01) |
| Manufacturer | Advanced Micro Devices Inc, Raytheon Company, Dla Land And Maritime |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| AM27S19DMB | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| G286939-1 | raytheon company | microcircuit memory | 3b150 | RFQ |
| G311480-1 | raytheon company | microcircuit memory | 3b150 | RFQ |
| PRG311480-1 | raytheon company | microcircuit memory | 3b150 | RFQ |
| ROM/PROM FAMILY 013 | dla land and maritime | microcircuit memory | 16236 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.230 INCHES MINIMUM AND 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.510 INCHES MINIMUM AND 0.540 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.180 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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