Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-204-7268 (012047268) |
NCB Code | USA (01) |
Manufacturer | Thales Defense And Security Inc, Sagem Telecommunications, Safran Usa Inc, Rockwell Collins Aerospace, Boeing Company The, Dla Land And Maritime, Military Specifications, Thales Sa, Advanced Micro Devices Inc, Intel Corporation, Texas Instruments Inc |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
115587-0001 | thales defense and security inc | microcircuit memory | 65597 | RFQ |
14080035-0 | sagem telecommunications | microcircuit memory | faq15 | RFQ |
14080035-0 | safran usa inc | microcircuit memory | f6151 | RFQ |
351-2443-022 | rockwell collins aerospace | microcircuit memory | 13499 | RFQ |
477-2844-003 | boeing company the | microcircuit memory | 94756 | RFQ |
5962-8411102BYA | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8411102BYB | dla land and maritime | microcircuit memory | 67268 | RFQ |
5962-8411102BYX | dla land and maritime | microcircuit memory | 67268 | RFQ |
84111 | dla land and maritime | microcircuit memory | 67268 | RFQ |
8411102YA | dla land and maritime | microcircuit memory | 67268 | RFQ |
8411102YX | military specifications | microcircuit memory | 81349 | RFQ |
99143737 | thales sa | microcircuit memory | f6481 | RFQ |
AM27256-25 BXA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
AM27256-25DMB | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
D27256-30 | intel corporation | microcircuit memory | 34649 | RFQ |
MD27256 25 B | intel corporation | microcircuit memory | 34649 | RFQ |
ROM PROM HEAD 247 | dla land and maritime | microcircuit memory | 16236 | RFQ |
SMJ27256-25JM | texas instruments inc | microcircuit memory | 01295 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND GATED OUTPUT AND HERMETICALLY SEALED AND MEDIUM SPEED AND MONOLITHIC AND PARALLEL OPERATION AND POSITIVE OUTPUTS AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/BUFFERED OUTPUT AND W/INDEPENDENT OUTPU |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 14933-84111 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWIN |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
ADAQ | BODY LENGTH | 1.485 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.560 INCHES MINIMUM AND 0.625 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.217 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
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