Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-199-7510 (011997510) |
NCB Code | USA (01) |
Manufacturer | Raytheon Company, Bae Systems Inc, Edo Corp, Hamilton Sundstrand Corporation, Bae Systems Information, Honeywell International Inc, Dla Land And Maritime, Seeq Technology Inc, Intel Corporation, Eldec Corporation |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
2690986-1 | raytheon company | microcircuit memory | 96214 | RFQ |
312342-001 | bae systems inc | microcircuit memory | 81413 | RFQ |
433486-77 | edo corp | microcircuit memory | 00752 | RFQ |
577 36 | hamilton sundstrand corporation | microcircuit memory | 73030 | RFQ |
5E8077 36 | hamilton sundstrand corporation | microcircuit memory | 73030 | RFQ |
6011485-001 | bae systems information | microcircuit memory | 12436 | RFQ |
6404238-1 | honeywell international inc | microcircuit memory | 55974 | RFQ |
82025 | dla land and maritime | microcircuit memory | 67268 | RFQ |
8202502YA | dla land and maritime | microcircuit memory | 67268 | RFQ |
8202502YB | dla land and maritime | microcircuit memory | 67268 | RFQ |
8202502YX | dla land and maritime | microcircuit memory | 67268 | RFQ |
DM27128-250 | seeq technology inc | microcircuit memory | 61394 | RFQ |
DM27128-251B | seeq technology inc | microcircuit memory | 61394 | RFQ |
MD27128 25 B | intel corporation | microcircuit memory | 34649 | RFQ |
ROM PROM HEAD 191 | dla land and maritime | microcircuit memory | 16236 | RFQ |
UM23-02 | eldec corporation | microcircuit memory | 08748 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.217 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMED |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES NOMINAL SUPPLY |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | PROM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
Components Related to NSN - 5962-01-199-7510, 5962011997510 | ||||
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5998-01-289-0549 (5998012890549) | 5962-00-274-2396 (5962002742396) | 5962-01-093-6792 (5962010936792) | 5930-01-169-8149 (5930011698149) | |
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