| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-135-7400 (011357400) |
| NCB Code | USA (01) |
| Manufacturer | Rolm Corp, Bae Systems Inc, Dla Land And Maritime, Lockheed Martin Corporation, Honeywell International Inc, Advanced Micro Devices Inc, Sri International |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 107229-01 | rolm corp | microcircuit memory | 14345 | RFQ |
| 202620-002 | bae systems inc | microcircuit memory | 81413 | RFQ |
| 78015 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 7801501EA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 7801501EB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 7801501EX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 7907352-01 | lockheed martin corporation | microcircuit memory | 90536 | RFQ |
| 8002560-470 | honeywell international inc | microcircuit memory | 07187 | RFQ |
| AM27507A | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM27S07A BEA | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM27S07APC | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM27S07DMB | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM27S07PC | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM29701DM | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM29701DM-B | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| GEM13501QEA | sri international | microcircuit memory | 0dks7 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | SCHOTTKY AND MONOLITHIC AND W/ENABLE AND 3-STATE OUTPUT AND HIGH SPEED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 105.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| Components Related to NSN - 5962-01-135-7400, 5962011357400 | ||||
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| 5998-01-670-0290 (5998016700290) | 5905-01-099-4430 (5905010994430) | 5930-01-046-8141 (5930010468141) | 5995-01-460-6411 (5995014606411) | |
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