| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-123-7987 (011237987) |
| NCB Code | USA (01) |
| Manufacturer | Mmi Amd, Philips Semiconductors Ltd, Raytheon Company, Intersil Corporation, Dla Land And Maritime, Texas Instruments Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1010 | mmi amd | microcircuit memory | 50364 | RFQ |
| 17682 | mmi amd | microcircuit memory | 50364 | RFQ |
| 5301-F | mmi amd | microcircuit memory | 50364 | RFQ |
| 82S129 | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| 932820-47 | raytheon company | microcircuit memory | 82577 | RFQ |
| B1584-505B | intersil corporation | microcircuit memory | 34371 | RFQ |
| B2054-47 | intersil corporation | microcircuit memory | 34371 | RFQ |
| CC1643 | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| CC5193-47 | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| MM5301 | mmi amd | microcircuit memory | 50364 | RFQ |
| ROM PROM FAMILY 014 | dla land and maritime | microcircuit memory | 16236 | RFQ |
| ROM PROM FAMILY 015 | dla land and maritime | microcircuit memory | 16236 | RFQ |
| SN54S287 | texas instruments inc | microcircuit memory | 01295 | RFQ |
| SN91026W | texas instruments inc | microcircuit memory | 01295 | RFQ |
| SN92828W-47 | texas instruments inc | microcircuit memory | 01295 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.440 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.085 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 910.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND BIPOLAR AND W/ENABLE AND 3-STATE OUTPUT AND W/BUFFERED OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 89.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 82577-932820 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
| Components Related to NSN - 5962-01-123-7987, 5962011237987 | ||||
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