Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-117-7026 (011177026) |
NCB Code | USA (01) |
Manufacturer | Lockheed Martin Corporation, Rochester Electronics Llc, Northrop Grumman Systems Corporation, Advanced Micro Devices Inc, Msis Semiconductor Inc, Intel Corporation, Intersil Corporation, National Semiconductor Corporation |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
16007758 | lockheed martin corporation | microcircuit memory | 98897 | RFQ |
1U10061-101A | lockheed martin corporation | microcircuit memory | 98897 | RFQ |
2102AJ R | rochester electronics llc | microcircuit memory | 3v146 | RFQ |
839015-014 | northrop grumman systems corporation | microcircuit memory | 06481 | RFQ |
971224-221 | northrop grumman systems corporation | microcircuit memory | 06481 | RFQ |
AM9102 BDM | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
AM9102ADM | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
AM9102BDM | msis semiconductor inc | microcircuit memory | 0hw02 | RFQ |
CM2102A-4 | intel corporation | microcircuit memory | 34649 | RFQ |
D8102A-4 | intel corporation | microcircuit memory | 34649 | RFQ |
IM7552SEL | intersil corporation | microcircuit memory | 32293 | RFQ |
MC2102A-4 | intel corporation | microcircuit memory | 34649 | RFQ |
MD8102A-4 B | intel corporation | microcircuit memory | 34649 | RFQ |
MM2102AJ 4 883 | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 260.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 1 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM TOTAL SUPPLY |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MILSTD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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