| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-108-4751 (011084751) |
| NCB Code | USA (01) |
| Manufacturer | British Aerospace Inc, Advanced Micro Devices Inc, Intel Corporation, St Microelectronics Ltd, National Semiconductor Corporation, Texas Instruments Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 41361-238-00-3 | british aerospace inc | microcircuit memory | k4556 | RFQ |
| AM2716-1DC | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| AM2716-1DI | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| B2716-1 | intel corporation | microcircuit memory | 34649 | RFQ |
| D2716-1 | intel corporation | microcircuit memory | 34649 | RFQ |
| M2716-1F1 | st microelectronics ltd | microcircuit memory | 66958 | RFQ |
| MM2716-1 | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| MM27169-1 | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| MM2716Q-1 | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| P2716-1 | intel corporation | microcircuit memory | 34649 | RFQ |
| TMS2516-35JL | texas instruments inc | microcircuit memory | 01295 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 525.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 0.0/70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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