Item Name | Microcircuitmemory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-079-7736 (010797736) |
NCB Code | USA (01) |
Manufacturer | Hewlett-Packard Company, Bae Systems Inc, Intel Corporation, Raytheon Company, Advanced Micro Devices Inc, Dla Land And Maritime, Fairchild Semiconductor Corp, National Semiconductor Corporation, Philips Semiconductors Ltd |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
1818-1756 | hewlett-packard company | microcircuitmemory | 28480 | RFQ |
202340-001 | bae systems inc | microcircuitmemory | 81413 | RFQ |
202340-001 | intel corporation | microcircuitmemory | 34649 | RFQ |
341844-1 | raytheon company | microcircuitmemory | 96214 | RFQ |
906745-103 | raytheon company | microcircuitmemory | 49956 | RFQ |
9102DDC | advanced micro devices inc | microcircuitmemory | 34335 | RFQ |
9102DM B | advanced micro devices inc | microcircuitmemory | 34335 | RFQ |
AM9102DM | advanced micro devices inc | microcircuitmemory | 34335 | RFQ |
DMS 84006B | dla land and maritime | microcircuitmemory | 16236 | RFQ |
HL31687 | fairchild semiconductor corp | microcircuitmemory | 07263 | RFQ |
MD2102A 6B | intel corporation | microcircuitmemory | 34649 | RFQ |
MD2102A-6 | intel corporation | microcircuitmemory | 34649 | RFQ |
MM2102AJ6L | national semiconductor corporation | microcircuitmemory | 27014 | RFQ |
MM2102J 883B | national semiconductor corporation | microcircuitmemory | 27014 | RFQ |
RBX2102F | philips semiconductors ltd | microcircuitmemory | 18324 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND W/DECODED OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 81413-202340 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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