Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-077-6118 (010776118) |
NCB Code | USA (01) |
Manufacturer | Usacecom Intelligence Electronic, Bae Systems Inc, Rockwell Collins Aerospace, Hubbell Harvey Inc, Hydra Electric Company, National Semiconductor Corporation, Siliconix Incorporated, Dla Land And Maritime |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
0213-1-1150-2 | usacecom intelligence electronic | microcircuit memory | 15942 | RFQ |
310429P2 | bae systems inc | microcircuit memory | 94117 | RFQ |
351-7449-021 | rockwell collins aerospace | microcircuit memory | 13499 | RFQ |
730-0045 | hubbell harvey inc | microcircuit memory | 22818 | RFQ |
900348 | hydra electric company | microcircuit memory | 33827 | RFQ |
AM3705D883B | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
AM3705DM | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
DG501AP 883B | siliconix incorporated | microcircuit memory | 17856 | RFQ |
DG501AP 883B-2 | siliconix incorporated | microcircuit memory | 17856 | RFQ |
DG501AP 883C | siliconix incorporated | microcircuit memory | 17856 | RFQ |
DG501AP-2 | siliconix incorporated | microcircuit memory | 17856 | RFQ |
DG501AP-4 | siliconix incorporated | microcircuit memory | 17856 | RFQ |
DG501BP | siliconix incorporated | microcircuit memory | 17856 | RFQ |
DMS 91137B | dla land and maritime | microcircuit memory | 16236 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 450.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 1500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 2500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 15942-0213-1-1150-2 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNIN |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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