| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-076-6621 (010766621) |
| NCB Code | USA (01) |
| Manufacturer | Mmi Amd, Raytheon Company, Intersil Corporation, Intersil Communications Inc, Philips Semiconductors Ltd, Advanced Micro Devices Inc, Fairchild Semiconductor Corp, Dla Land And Maritime, Texas Instruments Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 17639 | mmi amd | microcircuit memory | 50364 | RFQ |
| 932820-4 | raytheon company | microcircuit memory | 82577 | RFQ |
| B2054-4 | intersil corporation | microcircuit memory | 34371 | RFQ |
| B2054-4 | intersil communications inc | microcircuit memory | 1my79 | RFQ |
| CC5193-4 | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| DH75681-4 | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| HM9-7611-2 | intersil corporation | microcircuit memory | 34371 | RFQ |
| HR10804 | fairchild semiconductor corp | microcircuit memory | 07263 | RFQ |
| MM5301-1F | mmi amd | microcircuit memory | 50364 | RFQ |
| ROM PROM FAMILY 015 | dla land and maritime | microcircuit memory | 16236 | RFQ |
| S82S129W | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| SN54S287W | texas instruments inc | microcircuit memory | 01295 | RFQ |
| SN92785W | texas instruments inc | microcircuit memory | 01295 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.440 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.085 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 910.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DI |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 82577-932820 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
| Components Related to NSN - 5962-01-076-6621, 5962010766621 | ||||
| 5950-00-090-9508 (5950000909508) | 5995-01-203-9438 (5995012039438) | 5910-01-019-3189 (5910010193189) | 5910-00-107-4241 (5910001074241) | |
| 5905-01-061-7043 (5905010617043) | 5998-01-200-5542 (5998012005542) | 5995-01-006-0886 (5995010060886) | 5998-01-393-1676 (5998013931676) | |
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