Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-047-2035 (010472035) |
NCB Code | USA (01) |
Manufacturer | Interlink Communications Inc, Northrop Grumman Systems Corporation, Lockheed Martin Corporation, Texas Instruments Inc, Nec Electronics Usa Inc, Intel Corporation, Freescale Semiconductor Inc, Dla Land And Maritime |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
40-018015-01 | interlink communications inc | microcircuit memory | 30890 | RFQ |
989C289H01 | northrop grumman systems corporation | microcircuit memory | 18323 | RFQ |
C8857-1 | lockheed martin corporation | microcircuit memory | 81755 | RFQ |
CCA3329 | texas instruments inc | microcircuit memory | 01295 | RFQ |
EA2708-6 | nec electronics usa inc | microcircuit memory | 33297 | RFQ |
H8708 | intel corporation | microcircuit memory | 34649 | RFQ |
MC2708 B | intel corporation | microcircuit memory | 34649 | RFQ |
MCM2708BJBJC | freescale semiconductor inc | microcircuit memory | 04713 | RFQ |
MD2708 B | intel corporation | microcircuit memory | 34649 | RFQ |
ROM PROM FAMILY 014 | dla land and maritime | microcircuit memory | 16236 | RFQ |
SCM37502L | freescale semiconductor inc | microcircuit memory | 04713 | RFQ |
TMS2708-45JDL | texas instruments inc | microcircuit memory | 01295 | RFQ |
ZA0700JM | texas instruments inc | microcircuit memory | 01295 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.200 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.320 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.5 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH SPEED AND 3-STATE OUTPUT AND PROGRAMMABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND METAL |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 15.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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