| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-039-7349 (010397349) |
| NCB Code | USA (01) |
| Manufacturer | Lockheed Martin Corporation, Mmi Amd, Dla Land And Maritime |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 278539-02 | lockheed martin corporation | microcircuit memory | 60854 | RFQ |
| 278539-02 | mmi amd | microcircuit memory | 50364 | RFQ |
| 6306-1J | mmi amd | microcircuit memory | 50364 | RFQ |
| MM6306-1J | mmi amd | microcircuit memory | 50364 | RFQ |
| ROM/PROM FAMILY 008 | dla land and maritime | microcircuit memory | 16236 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 625.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 0.0/75.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | CHEYENNE AIRCRAFT MODEL 427M |
| CBBL | FEATURES PROVIDED | BIPOLAR AND HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/DISABLE AND W/ENABLE AND W/STORAGE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | -0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 11530-278539 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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