| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-281-7514 (012817514) |
| NCB Code | USA (01) |
| Manufacturer | Military Specifications, Infineon Technologies, General Electric Company, Westinghouse Electric Corp, Electronic Industries Inc, Raytheon Company, Powerex Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1N3296 | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N3296AR | infineon technologies | semiconductor device diode | 81483 | RFQ |
| 1N3296R | general electric company | semiconductor device diode | 03508 | RFQ |
| 1N3296R | westinghouse electric corp | semiconductor device diode | 79500 | RFQ |
| 1N3296R | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 975057-2 | raytheon company | semiconductor device diode | 54x10 | RFQ |
| A170RPBX27 | general electric company | semiconductor device diode | 03508 | RFQ |
| PRXR5011210WCA14 | westinghouse electric corp | semiconductor device diode | 05277 | RFQ |
| R50112 0WCA14 | powerex inc | semiconductor device diode | 66844 | RFQ |
| R5M11210XXWLAS14 | powerex inc | semiconductor device diode | 66844 | RFQ |
| RELEASE3383 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 4.480 INCHES MINIMUM AND 5.390 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | AN/SPG-51C RADAR SET |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND REVERSE POLARITY |
| CCDG | OVERALL WIDTH ACROSS FLATS | 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM |
| CQJX | NOMINAL THREAD SIZE | 0.375 INCHES |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1600.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 840.0 MAXIMUM REVERSE VOLTAGE,TOTAL RMS AND 1200.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 2300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG |
| Components Related to NSN - 5961-01-281-7514, 5961012817514 | ||||
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