| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-159-0850 (011590850) |
| NCB Code | USA (01) |
| Manufacturer | Nimikkeistokeskus Ncb Finland, Rockwell Collins Aerospace, L 3 Communications Marine Systems, Mbda Incorporated, Military Specifications, Ultra Electronics Ltd |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 10129863 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 353-9016-910 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| ANTX1N6054AJ | l 3 communications marine systems | semiconductor device diode | kcwr7 | RFQ |
| B76037 | mbda incorporated | semiconductor device diode | k0967 | RFQ |
| JANTX1N6054A | military specifications | semiconductor device diode | 81349 | RFQ |
| M60002887B 45 | ultra electronics ltd | semiconductor device diode | k2509 | RFQ |
| M60002887B ITEM 45 | ultra electronics ltd | semiconductor device diode | k2509 | RFQ |
| M60005760 9 | ultra electronics ltd | semiconductor device diode | k2509 | RFQ |
| M60005760 ITEM 9 | ultra electronics ltd | semiconductor device diode | k2509 | RFQ |
| MIL-PRF-19500/507 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/507 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.570 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.235 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-13 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.9 MINIMUM BREAKDOWN VOLTAGE,DC AND 45.2 MAXIMUM BREAKDOWN VOLTAGE,DC AND 36.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT,DC |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM AVERAGE ON-STATE POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-01-159-0850, 5961011590850 | ||||
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| 5940-01-264-7111 (5940012647111) | 5905-01-342-3348 (5905013423348) | 5960-00-995-5932 (5960009955932) | 5910-00-469-3009 (5910004693009) | |
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