Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-132-0039 (011320039) |
NCB Code | USA (01) |
Manufacturer | Northrop Grumman Systems Corporation, Nimikkeistokeskus Ncb Finland, Navair And Navsea Managed, Texas Instruments Inc, Bae Systems Inc, Datron The Instruments Inc, Lockheed Martin Corporation, Rockwell Collins Aerospace, L 3 Communications Corporation, Military Specifications, Joint Army-Navy Specifications |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
019-003872-060 | northrop grumman systems corporation | semiconductor device diode | 26916 | RFQ |
10133297 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
1820838-4 | navair and navsea managed | semiconductor device diode | 10001 | RFQ |
1N749ASPL | texas instruments inc | semiconductor device diode | 01295 | RFQ |
200441-118 | bae systems inc | semiconductor device diode | 81413 | RFQ |
374-00044 | datron the instruments inc | semiconductor device diode | 13488 | RFQ |
650C6 | texas instruments inc | semiconductor device diode | 01295 | RFQ |
7900258-06 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
995-9502-023 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
HZ8832 | l 3 communications corporation | semiconductor device diode | 73293 | RFQ |
JAN1N749A1 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N749A | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
JANTX1N749A | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N749A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX749A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-PRF-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
TX1N759A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.3 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 90.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
Components Related to NSN - 5961-01-132-0039, 5961011320039 | ||||
5925-01-622-1713 (5925016221713) | 5950-00-224-8269 (5950002248269) | 5999-00-940-2834 (5999009402834) | 5945-00-963-1183 (5945009631183) | |
5940-00-615-5893 (5940006155893) | 5998-00-297-6935 (5998002976935) | 5950-00-646-2937 (5950006462937) | 5961-00-228-5860 (5961002285860) | |
5935-01-107-8942 (5935011078942) | 5945-01-131-3787 (5945011313787) | 5998-01-373-2457 (5998013732457) | 5950-01-276-8859 (5950012768859) | |
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