Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-123-2991 (011232991) |
NCB Code | USA (01) |
Manufacturer | Texas Instruments Inc, Raytheon Company, Fei Microwave Inc, Hewlett-Packard Company, Semic Rf Electronic Gmbh, Cobham Advanced Electronic Solutions Inc, Massachusetts Bay Technologies Inc, Semi General Inc, Micrometrics Inc |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
8879000100-1 | texas instruments inc | semiconductor device diode | 57057 | RFQ |
925236-1B | raytheon company | semiconductor device diode | 82577 | RFQ |
A2X1645 | fei microwave inc | semiconductor device diode | 21847 | RFQ |
HSCH-0812 | hewlett-packard company | semiconductor device diode | 54893 | RFQ |
HSCH-3486 | hewlett-packard company | semiconductor device diode | 98734 | RFQ |
MA4E209 | semic rf electronic gmbh | semiconductor device diode | dg438 | RFQ |
MA4E209 | cobham advanced electronic solutions inc | semiconductor device diode | 96341 | RFQ |
MBT5236-75 | massachusetts bay technologies inc | semiconductor device diode | 1w7d7 | RFQ |
MX5236-75 | semi general inc | semiconductor device diode | 3bby6 | RFQ |
MX5236-75 | micrometrics inc | semiconductor device diode | 0eff4 | RFQ |
QSCH-3951 | hewlett-packard company | semiconductor device diode | 28480 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.170 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.600 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.076 INCHES MAXIMUM |
AGAV | END ITEM IDENTIFICATION | RADAR 76301 |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
CTRD | POWER RATING PER CHARACTERISTIC | 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
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