| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-112-7347 (011127347) |
| NCB Code | USA (01) |
| Manufacturer | Nimikkeistokeskus Ncb Finland, Military Specifications, Inspektorat Wsparcia Sil Zbrojnych, Arrow Zeus Electronics, Harvey Electronics Inc, Arrow Electronics Inc, Hamilton Sundstrand Corporation, Pacific Power Source Inc, Joint Army-Navy Specifications |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 10133219 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 1N821 | military specifications | semiconductor device diode | 81349 | RFQ |
| 5961PL0190507 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 5E4820 07-0001 | arrow zeus electronics | semiconductor device diode | 6m193 | RFQ |
| 5E4820/07-0001 | harvey electronics inc | semiconductor device diode | 3t912 | RFQ |
| 5E4820/07-0001 | arrow electronics inc | semiconductor device diode | 1by04 | RFQ |
| 5E4820/07-0001 | hamilton sundstrand corporation | semiconductor device diode | 73030 | RFQ |
| 741002 | pacific power source inc | semiconductor device diode | 57148 | RFQ |
| JAN1N821 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N821 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| JANTX1N821 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N821-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| JTX1N821 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/159 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 70.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/159 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-01-112-7347, 5961011127347 | ||||
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| 5940-00-615-5893 (5940006155893) | 5998-00-297-6935 (5998002976935) | 5950-00-646-2937 (5950006462937) | 5961-00-228-5860 (5961002285860) | |
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