Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-107-5299 (011075299) |
NCB Code | USA (01) |
Manufacturer | General Semiconductor Inc, Microsemi Corporation, Freescale Semiconductor Inc, Pulsar Developments Ltd, Protek Devices Lp, The Boeing Company, Woodward Inc, Raytheon Company, Lockheed Martin Corporation, Military Specifications, Meggitt International Ltd |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
1N829 | general semiconductor inc | semiconductor device diode | 24444 | RFQ |
1N829 | microsemi corporation | semiconductor device diode | 14552 | RFQ |
1N829 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
1N829 | pulsar developments ltd | semiconductor device diode | u3635 | RFQ |
1N829 | protek devices lp | semiconductor device diode | 0u8a3 | RFQ |
229-10709-1 | the boeing company | semiconductor device diode | 81205 | RFQ |
232160 | woodward inc | semiconductor device diode | 66503 | RFQ |
720602-8 | raytheon company | semiconductor device diode | 05869 | RFQ |
7902181-02 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
DT940615A | microsemi corporation | semiconductor device diode | 12954 | RFQ |
IN829 | military specifications | semiconductor device diode | 81349 | RFQ |
JAN1N829 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
JAN1N829-1 | military specifications | semiconductor device diode | 81349 | RFQ |
JANIN829 | meggitt international ltd | semiconductor device diode | 58880 | RFQ |
JANTX1N829-1 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-PRF-19500/159 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/159 | military specifications | semiconductor device diode | 81349 | RFQ |
SZ11730-02 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
TX1N829 | military specifications | semiconductor device diode | 81349 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REFERENCE |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 70.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/159 GOVERNMENT SPECIFICATION |
Components Related to NSN - 5961-01-107-5299, 5961011075299 | ||||
5935-00-789-6206 (5935007896206) | 5999-00-195-5441 (5999001955441) | 5930-00-426-2671 (5930004262671) | 5935-01-210-1780 (5935012101780) | |
5990-01-114-9896 (5990011149896) | 5925-01-198-7912 (5925011987912) | 5995-01-152-5092 (5995011525092) | 5910-00-989-4896 (5910009894896) | |
5961-00-172-8326 (5961001728326) | 5950-00-971-5673 (5950009715673) | 5925-00-235-0046 (5925002350046) | 5962-01-421-9559 (5962014219559) | |
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