| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-107-5299 (011075299) |
| NCB Code | USA (01) |
| Manufacturer | Freescale Semiconductor Inc, Microsemi Corporation, Pulsar Developments Ltd, Protek Devices Lp, General Semiconductor Inc, The Boeing Company, Woodward Inc, Raytheon Company, Lockheed Martin Corporation, Military Specifications, Meggitt International Ltd |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1N829 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| 1N829 | microsemi corporation | semiconductor device diode | 14552 | RFQ |
| 1N829 | pulsar developments ltd | semiconductor device diode | u3635 | RFQ |
| 1N829 | protek devices lp | semiconductor device diode | 0u8a3 | RFQ |
| 1N829 | general semiconductor inc | semiconductor device diode | 24444 | RFQ |
| 229-10709-1 | the boeing company | semiconductor device diode | 81205 | RFQ |
| 232160 | woodward inc | semiconductor device diode | 66503 | RFQ |
| 720602-8 | raytheon company | semiconductor device diode | 05869 | RFQ |
| 7902181-02 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
| DT940615A | microsemi corporation | semiconductor device diode | 12954 | RFQ |
| IN829 | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N829 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| JAN1N829-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANIN829 | meggitt international ltd | semiconductor device diode | 58880 | RFQ |
| JANTX1N829-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/159 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/159 | military specifications | semiconductor device diode | 81349 | RFQ |
| SZ11730-02 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| TX1N829 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REFERENCE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 70.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/159 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-01-107-5299, 5961011075299 | ||||
| 5925-01-622-1713 (5925016221713) | 5950-00-224-8269 (5950002248269) | 5999-00-940-2834 (5999009402834) | 5945-00-963-1183 (5945009631183) | |
| 5940-00-615-5893 (5940006155893) | 5998-00-297-6935 (5998002976935) | 5950-00-646-2937 (5950006462937) | 5961-00-228-5860 (5961002285860) | |
| 5935-01-107-8942 (5935011078942) | 5945-01-131-3787 (5945011313787) | 5998-01-373-2457 (5998013732457) | 5950-01-276-8859 (5950012768859) | |
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