Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-088-8346 (010888346) |
NCB Code | USA (01) |
Manufacturer | Electronic Industries Inc, Freescale Semiconductor Inc, Military Specifications, Infineon Technologies, Interstate Electronics Corporation, International Diode Corp, Espey Mfg And Electronics Corp, Champion Aviation Inc, General Semiconductor Inc, Gilbert Engineering Co Inc, Fairchild Semiconductor Corp, Texas Instruments Inc, Micro Uspd Inc, Solitron Devices Inc, Semitronics Corp, Microsemi Corporation, Bae Systems Inc, Astronics Test Systems Inc, E And R Electronics Inc, Raytheon Company, Lockheed Martin Corporation, Raytheon Technical Services Company, Hamilton Sundstrand Corporation, Telcom Semiconductor Inc, Power Mate Co, Joint Army-Navy Specifications |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
1N757A | electronic industries inc | semiconductor device diode | 80131 | RFQ |
1N757D | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
1N960 | military specifications | semiconductor device diode | 81349 | RFQ |
1N960A | infineon technologies | semiconductor device diode | 81483 | RFQ |
1N960B | interstate electronics corporation | semiconductor device diode | 07421 | RFQ |
1N960B | international diode corp | semiconductor device diode | 16068 | RFQ |
1N960B | electronic industries inc | semiconductor device diode | 80131 | RFQ |
1N960B | espey mfg and electronics corp | semiconductor device diode | 20950 | RFQ |
1N960B | champion aviation inc | semiconductor device diode | 08527 | RFQ |
1N960B | general semiconductor inc | semiconductor device diode | 24444 | RFQ |
1N960B | gilbert engineering co inc | semiconductor device diode | 03877 | RFQ |
1N960B | fairchild semiconductor corp | semiconductor device diode | 07263 | RFQ |
1N960B | texas instruments inc | semiconductor device diode | 01295 | RFQ |
1N960B | micro uspd inc | semiconductor device diode | 12969 | RFQ |
1N960B | solitron devices inc | semiconductor device diode | 21845 | RFQ |
1N960B | semitronics corp | semiconductor device diode | 31338 | RFQ |
1N960B | microsemi corporation | semiconductor device diode | 14552 | RFQ |
200441-126 | bae systems inc | semiconductor device diode | 81413 | RFQ |
220034 | astronics test systems inc | semiconductor device diode | 21793 | RFQ |
2601-3100 | e and r electronics inc | semiconductor device diode | 30669 | RFQ |
418715-63 | raytheon company | semiconductor device diode | 96214 | RFQ |
4907923-14 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
566573 | raytheon technical services company | semiconductor device diode | 36378 | RFQ |
5E4820 51-1015 | hamilton sundstrand corporation | semiconductor device diode | 73030 | RFQ |
619136-1 | raytheon company | semiconductor device diode | 37695 | RFQ |
CD32123 | telcom semiconductor inc | semiconductor device diode | 15818 | RFQ |
DR017000 | power mate co | semiconductor device diode | 23934 | RFQ |
E-233 | texas instruments inc | semiconductor device diode | 01295 | RFQ |
JAN1N757A | military specifications | semiconductor device diode | 81349 | RFQ |
JAN1N757A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N757A | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
JANTX1N757A-1 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N757A1 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
MIL-PRF-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/127 | military specifications | semiconductor device diode | 81349 | RFQ |
MIS-19836 64 | microsemi corporation | semiconductor device diode | 12954 | RFQ |
RELEASE2959 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.1 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
Components Related to NSN - 5961-01-088-8346, 5961010888346 | ||||
5905-00-502-3441 (5905005023441) | 5905-00-448-5537 (5905004485537) | 5940-00-621-2008 (5940006212008) | 5930-01-327-2312 (5930013272312) | |
5999-00-539-5784 (5999005395784) | 5905-01-313-7171 (5905013137171) | 5950-01-076-6980 (5950010766980) | 5965-01-571-2725 (5965015712725) | |
5920-01-501-5961 (5920015015961) | 5930-01-296-8547 (5930012968547) | 5996-00-048-2496 (5996000482496) | 5930-00-022-4311 (5930000224311) | |
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