| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-088-1530 (010881530) |
| NCB Code | USA (01) |
| Manufacturer | Nimikkeistokeskus Ncb Finland, Electronic Industries Inc, General Semiconductor Inc, Rockwell Collins Aerospace, Bae Systems Inc, G E C Marconi Defence Systems Ltd, Northrop Grumman Systems Corporation, Thales Defense And Security Inc, Military Specifications |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 10389044 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 1N5639 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N5639 | general semiconductor inc | semiconductor device diode | 24444 | RFQ |
| 353-9016-840 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 415 4 05872 639 | bae systems inc | semiconductor device diode | k1156 | RFQ |
| 415-4-05872-639 | g e c marconi defence systems ltd | semiconductor device diode | k6036 | RFQ |
| 944467-6391 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
| JANTX1N5639A | thales defense and security inc | semiconductor device diode | 65597 | RFQ |
| JANTX1N5639A | military specifications | semiconductor device diode | 81349 | RFQ |
| JTX1N5639A | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/500 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/500 | military specifications | semiconductor device diode | 81349 | RFQ |
| RELEASE 6049 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 17.1 MINIMUM BREAKDOWN VOLTAGE,DC AND 18.9 MAXIMUM BREAKDOWN VOLTAGE,DC AND 15.3 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT,DC |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM AVERAGE ON-STATE POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/500 GOVERNMENT SPECIFICATION |
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