| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-074-4618 (010744618) |
| NCB Code | USA (01) |
| Manufacturer | Nimikkeistokeskus Ncb Finland, Boeing Company The, National Semiconductor Corporation, Microsemi Corporation, Lockheed Martin Corporation, Micro Uspd Inc, Northrop Grumman Systems Corporation, Joint Army-Navy Specifications, Military Specifications, Dla Land And Maritime |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 10133186 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 479-1239-006 | boeing company the | semiconductor device diode | 94756 | RFQ |
| 7555859P613 | national semiconductor corporation | semiconductor device diode | 27014 | RFQ |
| 7555859P613 | microsemi corporation | semiconductor device diode | 14552 | RFQ |
| 7555859P613 | lockheed martin corporation | semiconductor device diode | 99971 | RFQ |
| 7555859P613 | micro uspd inc | semiconductor device diode | 12969 | RFQ |
| 948614-1501 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
| JAN1N3600 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| JAN1N3600 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTXV1N4150-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/231 | military specifications | semiconductor device diode | 81349 | RFQ |
| NH7555859P613 | dla land and maritime | semiconductor device diode | 16236 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MINIMUM BREAKDOWN VOLTAGE,DC AND 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/231 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-01-074-4618, 5961010744618 | ||||
| 5985-01-245-2747 (5985012452747) | 5950-00-250-7037 (5950002507037) | 5905-00-761-4481 (5905007614481) | 5935-01-107-5557 (5935011075557) | |
| 5962-01-413-9974 (5962014139974) | 5935-01-431-5243 (5935014315243) | 5935-01-258-2204 (5935012582204) | 5930-01-652-0055 (5930016520055) | |
| 5985-01-430-4939 (5985014304939) | 5962-01-119-4077 (5962011194077) | 5945-00-780-8564 (5945007808564) | 5975-01-705-5044 (5975017055044) | |
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