| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-070-7446 (010707446) |
| NCB Code | USA (01) |
| Manufacturer | Cts Fabri Tek Inc, Quadri Corp, Nimikkeistokeskus Ncb Finland, Systron Donner Corp, Keysight Technologies Inc, Telcom Semiconductor Inc, Texas Instruments Inc, Lockheed Martin Corporation, Rockwell Collins Aerospace, Honeywell International Inc, Raytheon Company, Inspektorat Wsparcia Sil Zbrojnych, Northrop Grumman Systems Corporation, Delco Electronics Corp, Mbda Incorporated, Asc Pty Ltd, Military Specifications, Itt Semiconductors |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 022-0163-00 | cts fabri tek inc | semiconductor device diode | 21542 | RFQ |
| 1-0002-0004-21 | quadri corp | semiconductor device diode | 08642 | RFQ |
| 10133183 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 112127 | systron donner corp | semiconductor device diode | 52542 | RFQ |
| 1901-1098 | keysight technologies inc | semiconductor device diode | 1lqk8 | RFQ |
| 1N4150 | telcom semiconductor inc | semiconductor device diode | 15818 | RFQ |
| 1N4150-1 | texas instruments inc | semiconductor device diode | 01295 | RFQ |
| 338307-7 | lockheed martin corporation | semiconductor device diode | 56232 | RFQ |
| 353-9014-040 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 4028318-501 | honeywell international inc | semiconductor device diode | 07187 | RFQ |
| 538450-1 | raytheon company | semiconductor device diode | 96214 | RFQ |
| 5961PL0927610 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 7118897-1 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
| 7892145-214 | delco electronics corp | semiconductor device diode | 99974 | RFQ |
| 7900106-02 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
| 947304-1508 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
| 995-9502-029 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| A03385 | mbda incorporated | semiconductor device diode | k0967 | RFQ |
| ASC1502505 | asc pty ltd | semiconductor device diode | z4779 | RFQ |
| CD9122 | telcom semiconductor inc | semiconductor device diode | 15818 | RFQ |
| JAN11N4150-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N4150 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N4150-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N4150UR-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTXIN4150 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/231 | military specifications | semiconductor device diode | 81349 | RFQ |
| PG 215 | texas instruments inc | semiconductor device diode | 01295 | RFQ |
| PG1174-3 | texas instruments inc | semiconductor device diode | 01295 | RFQ |
| TX1N4150 | military specifications | semiconductor device diode | 81349 | RFQ |
| TX1N4150-1 | military specifications | semiconductor device diode | 81349 | RFQ |
| WG 303 | itt semiconductors | semiconductor device diode | 14433 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MINIMUM BREAKDOWN VOLTAGE,DC AND 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/231 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-01-070-7446, 5961010707446 | ||||
| 5950-00-782-4837 (5950007824837) | 5905-01-053-5779 (5905010535779) | 5962-01-037-6404 (5962010376404) | 5995-01-204-1471 (5995012041471) | |
| 5970-01-146-4146 (5970011464146) | 5975-01-393-2233 (5975013932233) | 5999-01-420-7755 (5999014207755) | 5910-00-826-2725 (5910008262725) | |
| 5998-01-303-6935 (5998013036935) | 5935-01-273-2470 (5935012732470) | 5935-01-172-3967 (5935011723967) | 5999-01-176-2149 (5999011762149) | |
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