| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-058-6633 (010586633) |
| NCB Code | USA (01) |
| Manufacturer | Magnetec Corp, Nimikkeistokeskus Ncb Finland, Alliant Techsystems Operations Llc, Lockheed Martin Corporation, Bae Systems Inc, Rockwell Collins Aerospace, Honeywell International Inc, Ametek Inc, Northrop Grumman Systems Corporation, Military Specifications, Micro Uspd Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 01G009714-9 | magnetec corp | semiconductor device diode | 25230 | RFQ |
| 10133175 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 11001-184 | alliant techsystems operations llc | semiconductor device diode | 06424 | RFQ |
| 1204416-12 | lockheed martin corporation | semiconductor device diode | 56232 | RFQ |
| 226703-004 | bae systems inc | semiconductor device diode | 81413 | RFQ |
| 353-9019-400 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
| 4031353-504 | honeywell international inc | semiconductor device diode | 07187 | RFQ |
| 6701W14P002 | ametek inc | semiconductor device diode | 97424 | RFQ |
| 7906930-04 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
| 944467-8110 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
| JANTX1N5811 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N5835 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N6080 | military specifications | semiconductor device diode | 81349 | RFQ |
| JTX1N5811 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/477 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/477 | military specifications | semiconductor device diode | 81349 | RFQ |
| UTG1170 | micro uspd inc | semiconductor device diode | 12969 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | RECTIFIER |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/477 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-01-058-6633, 5961010586633 | ||||
| 5935-01-376-7509 (5935013767509) | 5965-01-666-8488 (5965016668488) | 5935-01-555-5092 (5935015555092) | 5975-01-685-8352 (5975016858352) | |
| 5998-01-392-3340 (5998013923340) | 5935-01-455-0919 (5935014550919) | 5935-01-087-5784 (5935010875784) | 5930-00-968-5115 (5930009685115) | |
| 5998-01-276-6482 (5998012766482) | 5962-01-169-3639 (5962011693639) | 5985-00-717-2726 (5985007172726) | 5935-01-353-1203 (5935013531203) | |
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