| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-057-2124 (010572124) |
| NCB Code | USA (01) |
| Manufacturer | Raytheon Company, Electronic Industries Inc, Inspektorat Wsparcia Sil Zbrojnych, Sundstrand International Corporation, Hamilton Sundstrand Corporation, Military Specifications, Gilbert Engineering Co Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 101623-1 | raytheon company | semiconductor device diode | 96214 | RFQ |
| 1N2043A | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 5961PL1253726 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 910C255-11 | sundstrand international corporation | semiconductor device diode | 83843 | RFQ |
| 910C255-11 | hamilton sundstrand corporation | semiconductor device diode | 99167 | RFQ |
| JAN1N3999A | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N2970RB | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N3999A | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/124 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/124 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/272 | military specifications | semiconductor device diode | 81349 | RFQ |
| SV2008 | gilbert engineering co inc | semiconductor device diode | 03877 | RFQ |
| SV2183 | gilbert engineering co inc | semiconductor device diode | 03877 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 1.253 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.505 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-4 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM |
| CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 370.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE OPTION GOLD |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB,SOLDER LUG AND 1 THREADED STUD |
| Components Related to NSN - 5961-01-057-2124, 5961010572124 | ||||
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| 5998-01-670-0290 (5998016700290) | 5905-01-099-4430 (5905010994430) | 5930-01-046-8141 (5930010468141) | 5995-01-460-6411 (5995014606411) | |
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