Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-043-9178 (010439178) |
NCB Code | USA (01) |
Manufacturer | Nimikkeistokeskus Ncb Finland, Compaq Federal Llc, Itt Semiconductors, Texas Instruments Inc, Fairchild Semiconductor Corp, Federal Specifications, Rockwell Collins Aerospace, Northrop Grumman Systems Corporation, Ge Aviation Systems Ltd, Military Specifications, Joint Army-Navy Specifications |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
10133165 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
11-11577-00 | compaq federal llc | semiconductor device diode | 15476 | RFQ |
1N4454 | itt semiconductors | semiconductor device diode | 15238 | RFQ |
1N4454-1 | texas instruments inc | semiconductor device diode | 01295 | RFQ |
1N4454-1 | fairchild semiconductor corp | semiconductor device diode | 07263 | RFQ |
1N4454JTX | federal specifications | semiconductor device diode | 81348 | RFQ |
353-8501-010 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
8879000050 | texas instruments inc | semiconductor device diode | 57057 | RFQ |
947304-4548 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
995-9502-020 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
EYZP830 | ge aviation systems ltd | semiconductor device diode | 05624 | RFQ |
JAN1N4454-1 | military specifications | semiconductor device diode | 81349 | RFQ |
JANIN3064 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
JANTX1N3064 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N4454 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N4454-1 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-PRF-19500/144 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/144 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/188 | military specifications | semiconductor device diode | 81349 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM REVERSE VOLTAGE,PEAK |
CTQX | CURRENT RATING PER CHARACTERISTIC | 225.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
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