Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-037-4712 (010374712) |
NCB Code | USA (01) |
Manufacturer | Nimikkeistokeskus Ncb Finland, Scientific Atlanta Inc, Micro Uspd Inc, Raytheon Company, Bae Systems Inc, Rockwell Collins Aerospace, Lockheed Martin Corporation, Northrop Grumman Systems Corporation, Mbda Incorporated, Eldec Corporation, Military Specifications, Joint Army-Navy Specifications |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
10133162 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
163964 | scientific atlanta inc | semiconductor device diode | 10110 | RFQ |
1N5806JTX | micro uspd inc | semiconductor device diode | 12969 | RFQ |
20-00779-004 | raytheon company | semiconductor device diode | 00724 | RFQ |
231048-706 | bae systems inc | semiconductor device diode | 81413 | RFQ |
3323-1229-1 | raytheon company | semiconductor device diode | 3b150 | RFQ |
353-9019-410 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
7906930-10 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
808136-2 | raytheon company | semiconductor device diode | 96214 | RFQ |
944467-8060 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
B72159 | mbda incorporated | semiconductor device diode | k0967 | RFQ |
CR122-04 | eldec corporation | semiconductor device diode | 08748 | RFQ |
JAN1N5806 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N5806 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N5806 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
JANTX1N5806US | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N6075 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-PRF-19500/477 | military specifications | semiconductor device diode | 81349 | RFQ |
UTR511 | micro uspd inc | semiconductor device diode | 12969 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 160.0 MAXIMUM BREAKDOWN VOLTAGE,DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | CERAMIC OR GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
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5998-01-289-0549 (5998012890549) | 5962-00-274-2396 (5962002742396) | 5962-01-093-6792 (5962010936792) | 5930-01-169-8149 (5930011698149) | |
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