| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-012-6693 (010126693) |
| NCB Code | USA (01) |
| Manufacturer | Quadri Corp, Dynalec Corporation, Raytheon Company, Rockwell Collins Aerospace, Honeywell International Inc, Siemens Energy And Automation Inc, Inspektorat Wsparcia Sil Zbrojnych, Northrop Grumman Systems Corporation, Lockheed Martin Corporation, Military Specifications, Joint Army-Navy Specifications, Trw Electronic Components, Micro Uspd Inc |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1-0002-0055-21 | quadri corp | semiconductor device diode | 08642 | RFQ |
| 16101-058 | dynalec corporation | semiconductor device diode | 12763 | RFQ |
| 167386-2 | raytheon company | semiconductor device diode | 49956 | RFQ |
| 353-9019-300 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
| 4031353-501 | honeywell international inc | semiconductor device diode | 07187 | RFQ |
| 53A0042 | siemens energy and automation inc | semiconductor device diode | 52025 | RFQ |
| 5961PL0835851 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 7117072-1 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
| 7906930-07 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
| 808136-1 | raytheon company | semiconductor device diode | 96214 | RFQ |
| JANTX1N5804 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N5804 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| MIL-PRF-19500/477 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/477 | military specifications | semiconductor device diode | 81349 | RFQ |
| PS41262 | trw electronic components | semiconductor device diode | 01281 | RFQ |
| UTG1240 | micro uspd inc | semiconductor device diode | 12969 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/477 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-01-012-6693, 5961010126693 | ||||
| 5935-00-789-6206 (5935007896206) | 5999-00-195-5441 (5999001955441) | 5930-00-426-2671 (5930004262671) | 5935-01-210-1780 (5935012101780) | |
| 5990-01-114-9896 (5990011149896) | 5925-01-198-7912 (5925011987912) | 5995-01-152-5092 (5995011525092) | 5910-00-989-4896 (5910009894896) | |
| 5961-00-172-8326 (5961001728326) | 5950-00-971-5673 (5950009715673) | 5925-00-235-0046 (5925002350046) | 5962-01-421-9559 (5962014219559) | |
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