Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-975-2175 (009752175) |
NCB Code | USA (00) |
Manufacturer | Military Specifications, Navair And Navsea Managed, Raytheon Company, Interstate Electronics Corporation, Rockwell Collins Aerospace, General Electric Company, Eca Etablissement Central Des, Lockheed Martin Corporation, Allen R C Instruments Inc, Texas Instruments Inc, Svenska Philips Ab |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
1N458 | military specifications | semiconductor device diode | 81349 | RFQ |
2318895P1 | navair and navsea managed | semiconductor device diode | 10001 | RFQ |
322MS056P001 | raytheon company | semiconductor device diode | 49956 | RFQ |
343-211-003 | interstate electronics corporation | semiconductor device diode | 07421 | RFQ |
353-0205-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
353-2576-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
353-8020-030 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
531553-1 | raytheon company | semiconductor device diode | 96214 | RFQ |
5494922P3 | general electric company | semiconductor device diode | 08771 | RFQ |
5961009752175 | eca etablissement central des | semiconductor device diode | scy13 | RFQ |
9000439-01 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
A147-04 | allen r c instruments inc | semiconductor device diode | 06275 | RFQ |
DL117 | texas instruments inc | semiconductor device diode | 01295 | RFQ |
JAN1N458 | military specifications | semiconductor device diode | 81349 | RFQ |
JAN1N458B | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-PRF-19500/193 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/193 | military specifications | semiconductor device diode | 81349 | RFQ |
RP491-75-1N458JAN | svenska philips ab | semiconductor device diode | s3090 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM REVERSE VOLTAGE,PEAK |
CTQX | CURRENT RATING PER CHARACTERISTIC | 165.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC AND 55.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT,180 DEGREES CONDUCTION ANGLE,AVERAGE OVER A FULL 60-HZ CYCLE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS CASE |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/193 GOVERNMENT SPECIFICATION |
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