Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-892-0913 (008920913) |
NCB Code | USA (00) |
Manufacturer | Military Specifications, Raytheon Systems Ltd, Thales Nederland Bv, Rockwell Collins Aerospace, Bae Systems Maritime Services, British Aerospace Inc, Raytheon Company, Leonardo Mw Ltd |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
1N3011B | military specifications | semiconductor device diode | 81349 | RFQ |
20-00091-010 | raytheon systems ltd | semiconductor device diode | k0268 | RFQ |
352250010073 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
353-1178-00 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
41147-233-00-5 | bae systems maritime services | semiconductor device diode | kc1m9 | RFQ |
41147-233-00-5 | british aerospace inc | semiconductor device diode | k4556 | RFQ |
41147-233-5 | british aerospace inc | semiconductor device diode | k4556 | RFQ |
41147-233-5 | bae systems maritime services | semiconductor device diode | kc1m9 | RFQ |
416903 | raytheon company | semiconductor device diode | 96214 | RFQ |
416903-33 | raytheon company | semiconductor device diode | 96214 | RFQ |
CS100035-42 | leonardo mw ltd | semiconductor device diode | u2248 | RFQ |
JAN1N3011B | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-PRF-19500/124 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/124 | military specifications | semiconductor device diode | 81349 | RFQ |
VBE890-1N3011B | thales nederland bv | semiconductor device diode | h0203 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | THREADED STUD |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 310.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS CASE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION |
AKPV | MOUNTING FACILITY QUANTITY | 1 |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
CCDG | OVERALL WIDTH ACROSS FLATS | 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM |
CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 150.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
THSD | THREAD SERIES DESIGNATOR | UNF |
TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB,SOLDER LUG AND 1 THREADED STUD |
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