| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-883-8906 (008838906) |
| NCB Code | USA (00) |
| Manufacturer | Basler Electric Company, Electronic Industries Inc, Ward Leonard Electric Company Inc, Military Specifications, Military Standards Corp, General Motors Corp, E2v Semiconductors, Thales Nederland Bv, Rockwell Collins Aerospace, Ge Aviation Systems Ltd, Raytheon Company, Inspektorat Wsparcia Sil Zbrojnych, Thales Defense And Security Inc, Nai Technologies Inc, Bogue Electric Manufacturing Co, Texas Instruments Inc, Adelco Elektronik Gmbh, Hollingsworth John R Co, Royal Gorge Casket Co, Infineon Technologies, Alcatel Lucent |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 04938 | basler electric company | semiconductor device diode | 97520 | RFQ |
| 04938 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N3016B | ward leonard electric company inc | semiconductor device diode | 20019 | RFQ |
| 1N3016B | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N3016B | military standards corp | semiconductor device diode | 96906 | RFQ |
| 1N3016B | general motors corp | semiconductor device diode | 72560 | RFQ |
| 1N9578 | e2v semiconductors | semiconductor device diode | f8385 | RFQ |
| 3191924 | general motors corp | semiconductor device diode | 72560 | RFQ |
| 352250010077 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
| 353-3046-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 353-3121-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 40-666-3498-01U | ge aviation systems ltd | semiconductor device diode | k5294 | RFQ |
| 4178600-83 | raytheon company | semiconductor device diode | 05869 | RFQ |
| 5961PL1385065 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 848117-0001 | thales defense and security inc | semiconductor device diode | 65597 | RFQ |
| 883386 | nai technologies inc | semiconductor device diode | 07342 | RFQ |
| A15768-1 | ge aviation systems ltd | semiconductor device diode | 07639 | RFQ |
| D17259-3 | bogue electric manufacturing co | semiconductor device diode | 07860 | RFQ |
| JAN1N3016B | texas instruments inc | semiconductor device diode | 01295 | RFQ |
| JAN1N3016B | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N3016BA | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
| JANTXV1N3016B | military specifications | semiconductor device diode | 81349 | RFQ |
| JHP111-131 | hollingsworth john r co | semiconductor device diode | 02032 | RFQ |
| MIL-PRF-19500/115 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/115 | military specifications | semiconductor device diode | 81349 | RFQ |
| MZ6-8V01 | royal gorge casket co | semiconductor device diode | 81843 | RFQ |
| MZ6-8V01 | infineon technologies | semiconductor device diode | 81483 | RFQ |
| RZ6-8 | alcatel lucent | semiconductor device diode | f6180 | RFQ |
| VBE890-1N3016B | thales nederland bv | semiconductor device diode | h0203 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 37.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 140.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| Components Related to NSN - 5961-00-883-8906, 5961008838906 | ||||
| 5905-00-837-8595 (5905008378595) | 5999-01-545-2960 (5999015452960) | 5977-00-038-2232 (5977000382232) | 5915-00-106-2867 (5915001062867) | |
| 5975-01-574-3976 (5975015743976) | 5999-01-243-9840 (5999012439840) | 5935-01-092-4809 (5935010924809) | 5962-01-480-9313 (5962014809313) | |
| 5998-01-543-3095 (5998015433095) | 5935-01-075-7203 (5935010757203) | 5930-01-092-4088 (5930010924088) | 5961-01-309-1613 (5961013091613) | |
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