Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-865-2063 (008652063) |
NCB Code | USA (00) |
Manufacturer | Te Ka De Felten, Infineon Technologies, Freescale Semiconductor Inc, Military Specifications, Yosemite Investment Inc, Joint Army-Navy Specifications, Joint Electron Device Engineering, Thales Uk Ltd, Racal Communications Systems Ltd, Thales Nederland Bv, Raytheon Company, Motorola Inc, Inspektorat Wsparcia Sil Zbrojnych, Kearfott Corporation, Adelco Elektronik Gmbh, Dla Land And Maritime |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
104 4114 156311 | te ka de felten | semiconductor device diode | d8770 | RFQ |
10Z6-8T10 | infineon technologies | semiconductor device diode | 81483 | RFQ |
1N2970 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
1N2970 | military specifications | semiconductor device diode | 81349 | RFQ |
1N2970A | yosemite investment inc | semiconductor device diode | 37942 | RFQ |
1N2970A | military specifications | semiconductor device diode | 81349 | RFQ |
1N2970B | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
1N2970B | joint electron device engineering | semiconductor device diode | 07688 | RFQ |
1N2970B | military specifications | semiconductor device diode | 81349 | RFQ |
22-1845 | thales uk ltd | semiconductor device diode | k0162 | RFQ |
22-1845 | racal communications systems ltd | semiconductor device diode | k0215 | RFQ |
352250010038 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
4178600-379 | raytheon company | semiconductor device diode | 05869 | RFQ |
48-14146A01 | motorola inc | semiconductor device diode | 94990 | RFQ |
48-14146A01 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
5961PL0991950 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
G181-616-0022 | kearfott corporation | semiconductor device diode | 88818 | RFQ |
JAN1N2970B | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
JAN1N2970B | military specifications | semiconductor device diode | 81349 | RFQ |
JAN1N2970BA | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
L03001 | dla land and maritime | semiconductor device diode | 16236 | RFQ |
MIL-PRF-19500/124 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/124 | military specifications | semiconductor device diode | 81349 | RFQ |
VBE890-1N2970B | thales nederland bv | semiconductor device diode | h0203 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS AND 60.0 MAXIMUM REVERSE VOLTAGE,PEAK |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM FORWARD CURRENT,DC AND 250.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT,180 DEGREES CONDUCTION ANGLE,AVERAGE OVER A FULL 60-HZ CYCLE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
ADAV | OVERALL DIAMETER | 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM |
MATT | MATERIAL | CERAMIC INCLOSURE |
TTQY | TERMINAL TYPE AND QUANTITY | 1 SOLDER STUD AND 1 TAB,SOLDER LUG |
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5998-01-392-3340 (5998013923340) | 5935-01-455-0919 (5935014550919) | 5935-01-087-5784 (5935010875784) | 5930-00-968-5115 (5930009685115) | |
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