| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-852-5170 (008525170) |
| NCB Code | USA (00) |
| Manufacturer | Hug Electronics Corp, Joint Electron Device Engineering, Electronic Industries Inc, Rockwell Collins Aerospace, Raytheon Company, Raytheon Technical Services Company, Inspektorat Wsparcia Sil Zbrojnych, Saab Scania Ab Data Saab, Thales Defense And Security Inc, Gte Communication Systems Corp, Military Specifications, Adelco Elektronik Gmbh |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1N3032B | hug electronics corp | semiconductor device diode | 07595 | RFQ |
| 1N3032B | joint electron device engineering | semiconductor device diode | 07688 | RFQ |
| 1N3032B | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 353-3062-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 353-3137-000 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
| 4178600-280 | raytheon company | semiconductor device diode | 05869 | RFQ |
| 430581 | raytheon technical services company | semiconductor device diode | 36378 | RFQ |
| 5961PL0801721 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 6124-355-007 | saab scania ab data saab | semiconductor device diode | s4294 | RFQ |
| 848037-0001 | thales defense and security inc | semiconductor device diode | 65597 | RFQ |
| FD1029HU | gte communication systems corp | semiconductor device diode | 04773 | RFQ |
| JAN1N3032B | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N3032BA | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
| MILS19500-115 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 33.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 28.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| MATT | MATERIAL | GLASS INCLOSURE |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
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