| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-849-4183 (008494183) |
| NCB Code | USA (00) |
| Manufacturer | Ampex Systems Corp, Itt Telecom Products Corp, Trw Electronic Components, Freescale Semiconductor Inc, Thales Nederland Bv, Rockwell Collins Aerospace, Raytheon Company, R F Power Labs Inc, Inspektorat Wsparcia Sil Zbrojnych, L 3 Communications Corporation, Litton Systems Inc, Northrop Grumman Systems Corporation, Military Specifications |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 013-628 | ampex systems corp | semiconductor device diode | 92739 | RFQ |
| 0534336 | itt telecom products corp | semiconductor device diode | 21340 | RFQ |
| 1N2989A | trw electronic components | semiconductor device diode | 01281 | RFQ |
| 1N2989A | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| 1N2989B | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| 3522 500 10055 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
| 353-1161-000 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
| 353-1161-001 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
| 4178600-089 | raytheon company | semiconductor device diode | 82577 | RFQ |
| 490052 | r f power labs inc | semiconductor device diode | 57143 | RFQ |
| 5961PL1277787 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 9300-256 | l 3 communications corporation | semiconductor device diode | 06141 | RFQ |
| 947090-9892 | litton systems inc | semiconductor device diode | 13973 | RFQ |
| GS810BN1 | northrop grumman systems corporation | semiconductor device diode | 26512 | RFQ |
| JAN1N2989B | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/124 | military specifications | semiconductor device diode | 81349 | RFQ |
| MILS19500-124 | military specifications | semiconductor device diode | 81349 | RFQ |
| VBE890 1N2989B | thales nederland bv | semiconductor device diode | h0203 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM |
| CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB,SOLDER LUG AND 1 THREADED STUD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.60 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS CASE |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
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| 5998-01-670-0290 (5998016700290) | 5905-01-099-4430 (5905010994430) | 5930-01-046-8141 (5930010468141) | 5995-01-460-6411 (5995014606411) | |
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