| Item Name | Transistor |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-845-3954 (008453954) |
| NCB Code | USA (00) |
| Manufacturer | Lockheed Martin Corporation, Military Specifications, Thales Nederland Bv, Thales Electronic Systems Gmbh, Inspektorat Wsparcia Sil Zbrojnych, Litton Systems Inc, Drs Sustainment Systems Inc, Adelco Elektronik Gmbh |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1049726-3 | lockheed martin corporation | transistor | 56232 | RFQ |
| 2N329A | military specifications | transistor | 81349 | RFQ |
| 352250010139 | thales nederland bv | transistor | h0203 | RFQ |
| 44532 51001 | thales electronic systems gmbh | transistor | d8385 | RFQ |
| 5961PL0190377 | inspektorat wsparcia sil zbrojnych | transistor | 9009h | RFQ |
| 947063-3291 | litton systems inc | transistor | 13973 | RFQ |
| ES1702 | drs sustainment systems inc | transistor | 20418 | RFQ |
| JAN2N329A | military specifications | transistor | 81349 | RFQ |
| JAN2N329AA | adelco elektronik gmbh | transistor | c7191 | RFQ |
| MIL-S-19500/110 | military specifications | transistor | 81349 | RFQ |
| TK5800600-3041 | thales electronic systems gmbh | transistor | d8385 | RFQ |
| VBE890-2N329A | thales nederland bv | transistor | h0203 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND-35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND-30.0 MAXIMUM EMITTER TO BASE VOLTAGE,STATIC,COLLECTOR OPEN |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/110 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-00-845-3954, 5961008453954 | ||||
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| 5999-01-564-5586 (5999015645586) | 5925-00-880-0235 (5925008800235) | 5930-01-352-5157 (5930013525157) | 5995-01-659-3389 (5995016593389) | |
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