| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-837-9288 (008379288) |
| NCB Code | USA (00) |
| Manufacturer | General Electric Company, General Dynamics Mission Systems, Freescale Semiconductor Inc, Military Specifications, Rockwell Collins Aerospace, Dne Technologies Inc, Raytheon Company, Thales Electronic Systems Gmbh, Elettronica Gmbh, Inspektorat Wsparcia Sil Zbrojnych, Bae Systems Inc, Litton Systems Inc, Joint Army-Navy Specifications, Adelco Elektronik Gmbh |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 19A115528P10 | general electric company | semiconductor device diode | 08771 | RFQ |
| 1M25Z5 | general dynamics mission systems | semiconductor device diode | 1vpw8 | RFQ |
| 1N3029 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| 1N3029B | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N3029BMILS19500-115 | military specifications | semiconductor device diode | 81349 | RFQ |
| 353-3059-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 40020161-000 | dne technologies inc | semiconductor device diode | 96238 | RFQ |
| 4178600-119 | raytheon company | semiconductor device diode | 05869 | RFQ |
| 44397 28109 | thales electronic systems gmbh | semiconductor device diode | d8385 | RFQ |
| 521-034-034 | elettronica gmbh | semiconductor device diode | c3141 | RFQ |
| 5961PL1277779 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 7538002P089 | bae systems inc | semiconductor device diode | 94117 | RFQ |
| 947179-292 | litton systems inc | semiconductor device diode | 13973 | RFQ |
| JAN1N3029B | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N3029B | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| JAN1N3029BA | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
| MIL-PRF-19500/115 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/115F | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 24.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-00-837-9288, 5961008379288 | ||||
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| 5998-01-392-3340 (5998013923340) | 5935-01-455-0919 (5935014550919) | 5935-01-087-5784 (5935010875784) | 5930-00-968-5115 (5930009685115) | |
| 5998-01-276-6482 (5998012766482) | 5962-01-169-3639 (5962011693639) | 5985-00-717-2726 (5985007172726) | 5935-01-353-1203 (5935013531203) | |
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